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1 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 hexfet ? power mosfet base part number package type standard pack orderable part number ? ? form quantity IRFH4255DPBF dual pqfn 5mm x 6mm tape and reel 4000 irfh4255dtrpbf q1 q2 v dss 25 25 v r ds(on) max (@v gs = 4.5v) 4.60 2.10 m ??? qg (typical) 10 ? 23 nc i d (@t c = 25c) 30 ? 30 ? a features benefits control and synchronous mosfets in one package increased power density low charge control mosfet (10nc typical) lower switching losses low r dson synchronous mosfet (<2.10m ? ) results in lower conduction losses rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability intrinsic schottky diode with low forward voltage on q2 ? lower switching losses notes ? through ? are on page 12 absolute maximum ratings ?? parameter q1 max. q2 max. units v gs gate-to-source voltage 20 ? v i d @ t c = 25c continuous drain current, v gs @ 4.5v 64 ?? 105 ?? a ? i d @ t c = 70c continuous drain current, v gs @ 4.5v 51?? 84?? i d @ t c = 25c continuous drain current, v gs @ 4.5v (source bonding technology limited) 30? 30? i dm pulsed drain current 120 420 ? p d @t c = 25c power dissipation 31 38 w ? p d @t c = 70c power dissipation 20 24 linear derating factor 0.25 0.30 w/c t j operating junction and -55 to + 150 t stg storage temperature range c ? applications ?? control and synchronous mosfets for synchronous buck converters ? ? dual pqfn 5x6 mm ? thermal resistance ??? parameter q1 max. q2 max. units r ? jc (bottom) junction-to-case ? 4.0 3.3 r ? jc (top) junction-to-case ? 20 12 r ? ja junction-to-ambient ? 34 31 r ? ja (<10s) junction-to-ambient ? 24 19 c/w fast ir fet? IRFH4255DPBF
? IRFH4255DPBF 2 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 static @ t j = 25c (unless otherwise specified) ???? ? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage q1 25 ??? ??? v v gs = 0v, i d = 250a q2 25 ??? ??? v gs = 0v, i d = 1.0ma ? bv dss / ? t j breakdown voltage temp. coefficient q1 ??? 22 ??? mv/c reference to 25c, i d = 1.0ma q2 ??? 23 ??? reference to 25c, i d = 10ma q1 ??? 2.50 3.20 m ? ? v gs = 10v, i d = 30a ? r ds(on) static drain-to-source on-resistance q2 ??? 1.20 1.50 v gs = 10v, i d = 30a ? q1 ??? 3.70 4.60 v gs = 4.5v, i d = 30a ? q2 ??? 1.65 2.10 v gs = 4.5v, i d = 30a ? v gs(th) gate threshold voltage q1 1.1 1.6 2.1 v q1: v ds = v gs , i d = 35a q2 1.1 1.6 2.1 q2: v ds = v gs , i d = 100a ? v gs(th) / ? t j gate threshold voltage coefficient q1 ??? -5.7 ??? mv/c q1: v ds = v gs , i d = 35a q2 ??? -5.3 ??? q2: v ds = v gs , i d = 1ma i dss drain-to-source leakage current q1 ??? ??? 1.0 a ? v ds = 20v, v gs = 0v ?? q2 ??? ??? 250 v ds = 20v, v gs = 0v i gss gate-to-source forward leakage q1 ??? ??? 100 na v gs = 20v q2 ??? ??? 100 v gs = 20v gate-to-source reverse leakage q1 ??? ??? -100 v gs = -20v q2 ??? ??? -100 v gs = -20v gfs forward transconductance q1 131 ??? ??? s v ds = 10v, i d = 30a q2 182 ??? ??? v ds = 10v, i d = 30a q g total gate charge q1 ??? 10 15 nc q2 ??? 23 35 q gs1 pre-vth gate-to-source charge q1 ??? 2.5 ??? q1 q2 ??? 4.5 ??? v ds = 13v q gs2 post-vth gate-to-source charge q1 ??? 1.6 ??? v gs = 4.5v, i d = 30a q2 ??? 2.3 ??? q gd gate-to-drain charge q1 ??? 3.8 ??? q2 q2 ??? 8.4 ??? v ds = 13v q godr gate charge overdrive q1 ??? 2.1 ??? v gs = 4.5v, i d = 30a q2 ??? 7.8 ??? q sw switch charge (q gs2 + q gd ) q1 ??? 5.4 ??? q2 ??? 10.7 ??? q oss output charge q1 ??? 10 ??? nc v ds = 16v, v gs = 0v q2 ??? 23 ??? r g gate resistance q1 ??? 2.4 ??? ?? q2 ??? 1.5 ??? t d(on) turn-on delay time q1 ??? 10 ??? ns q1 q2 ??? 10 ??? v ds = 13v v gs = 4.5v t r rise time q1 ??? 61 ??? i d = 30a, rg = 1.8 ? q2 ??? 43 ??? t d(off) turn-off delay time q1 ??? 13 ??? q2 q2 ??? 27 ??? v ds = 13v v gs = 4.5v t f fall time q1 ??? 15 ??? i d = 30a, rg = 1.8 ? q2 ??? 26 ??? c iss input capacitance q1 ??? 1314 ??? pf q2 ??? 2877 ??? v gs = 0v c oss output capacitance q1 ??? 365 ??? v ds = 13v q2 ??? 907 ??? ? = 1.0mhz c rss reverse transfer capacitance q1 ??? 92 ??? q2 ??? 234 ???
? IRFH4255DPBF 3 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 avalanche characteristics ??? parameter typ. q1 max. q2 max. units e as single pulse avalanche energy ? ??? 61 364 mj diode characteristics ????? ? parameter min. typ. max. units conditions i s continuous source current q1 ??? ??? 30 ? a mosfet symbol (body diode) q2 ??? ??? 30 ? showing the i sm pulsed source current q1 ??? ??? 120 a integral reverse (body diode) q2 ??? ??? 420 ? p-n junction diode. v sd diode forward voltage q1 ??? ??? 1.0 v t j = 25c, i s = 30a, v gs = 0v ? q2 ??? ??? 0.75 t j = 25c, i s = 30a, v gs = 0v ? t rr reverse recovery time q1 ??? 16 ??? ns q1 t j = 25c, i f = 30a q2 ??? 26 ??? v dd = 13v, di/dt = 235a/s ? q rr reverse recovery charge q1 ??? 13 ??? nc q2 t j = 25c, i f = 30a q2 ??? 34 ??? v dd = 13v, di/dt = 270a/s ?
? IRFH4255DPBF 4 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.1v 2.9v 2.7v bottom 2.5v ? 60s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 150c 2.5v vgs top 10v 5.0v 4.5v 3.5v 3.1v 2.9v 2.7v bottom 2.5v fig 1. typical output characteristics 1.5 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60s pulse width fig 5. typical transfer characteristics fig 3. typical output characteristics fig 2. typical output characteristics q1 - control fet q2 - synchronous fet fig 4. typical output characteristics 1 2 3 4 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60s pulse width fig 6. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.1v 2.9v 2.7v bottom 2.5v ? 60s pulse width tj = 150c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.1v 2.9v 2.7v bottom 2.5v ? 60s pulse width tj = 25c 2.5v
? IRFH4255DPBF 5 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 ? IRFH4255DPBF q1 - control fet q2 - synchronous fet 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v i d = 30a fig 7. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 9. typical gate charge vs . gate-to-source voltage fig 10. typical gate charge vs. gate-to-source voltage fig 11. maximum safe operating area fig 12. maximum safe operating area 0 102030405060 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v vds= 13v i d = 30a fig 8. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by package 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by package
? IRFH4255DPBF 6 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 fig 13. normalized on-resistance vs. temperature 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 30a t j = 25c t j = 125c fig 17. typical on-resistance vs. gate voltage fig 15. typical source-drain diode forward voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 30a v gs = 4.5v q1 - control fet q2 - synchronous fet fig 14. normalized on-resistance vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v fig 16. typical source-drain diode forward voltage fig 18. typical on-resistance vs. gate voltage 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 5 10 15 20 v gs, gate -to -source voltage (v) 0.0 1.0 2.0 3.0 4.0 5.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ? ) i d = 30a t j = 25c t j = 125c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 30a v gs = 4.5v
? IRFH4255DPBF 7 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 7 www.irf.com ? 2013 international rectifier july 31, 2013 -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 35a fig 19. maximum drain current vs. case temperature 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.7a 12a bottom 30a fig 21. threshold voltage vs. temperature fig 20. maximum drain current vs. case temperature fig 23. maximum avalanche energy vs. drain current 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 1600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.9a 16a bottom 60a fig 22. threshold voltage vs. temperature fig 24. maximum avalanche energy vs. drain current q1 - control fet q2 - synchronous fet -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0ma 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 i d , d r a i n c u r r e n t ( a ) limited by package 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 i d , d r a i n c u r r e n t ( a ) limited by package
? IRFH4255DPBF 8 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 25. typical avalanche current vs. pulse width (q1) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) fig 26. typical avalanche current vs. pulse width (q2) fig 27. maximum effective transient thermal impedance, junction-to-case (q1) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse)
? IRFH4255DPBF 9 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 fig 28. maximum effective transient thermal impedance, junction-to-case (q2) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc
? IRFH4255DPBF 10 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 fig 29. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 32a. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 32b. gate charge waveform fig 30a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 30b. unclamped inductive waveforms fig 31a. switching time test circuit fig 31b. switching time waveforms vdd ?
? IRFH4255DPBF 11 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ dual pqfn 5x6 outline ?h? package details for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf dual pqfn 5x6 outline ?h? part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) a b d e side view 4 index area (d/2xe/2) a1 c seating plane top view bottom view pin#1 id r0.30 d1 e1 e2 e 8x k l1 d2 8x b 7x l2 1.21 1.08 0.48 1.15 0.94 0.40 0.80 0.00 minimum 0.78 0.30 4.01 d e2 l2 d2 e e s y m b o l t h i c k n e s s a b a1 dimension table 0.60 maximum 0.05 1.00 0.50 4.26 1.03 6.00 bsc 0.50 1.27 bsc 5.00 bsc 4.16 0.93 nominal 0.02 0.90 v : very thin 0.40 6 note 0.20 k --- --- 2.67 4.66 4.41 2.42 d1 e1 2.57 4.56 1.87 1.77 1.67 l1
? IRFH4255DPBF 12 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ notes: ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, q1: l = 0.14mh, r g = 50 ? , i as = 30a; q2: l = 0.20mh, r g = 50 ? , i as = 60a. ? pulse width 400s; duty cycle 2%. ? r ? is measured at t j approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on ma ximum allowable junction temperature. ? current is limited to q1 = 30a & q2 = 30a by source bonding technology. ? pulsed drain current is limited to 120a by source bonding technology. qualification information ? ? qualification level industrial (per jedec jesd47f ?? guidelines ) moisture sensitivity level dual pqfn 5mm x 6mm msl1 (per jedec j-std-020d ??) rohs compliant yes ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? applicable version of jedec standar d at the time of product release. dual pqfn 5x6 outline tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ revision history date comments 01/27/2014 ?? update the msl level from msl2 to msl1, on page 1 & 12. 04/08/2014 ?? removed ?redundant? information of idss q1 & q2 on page 2.

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